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february 2007 rev 2 1/13 13 STD65N55F3 n-channel 55v - 8.0m ? - 65a - dpak stripfet? power mosfet general features standard threshold drive 100% avalanche tested description this n-channel enhancement mode power mosfet is the latest refinement of stmicroelectronics' unique ?single feature size?? strip-based process, which has decreased the critical alignment steps, offering remarkable manufacturing reproducibility. the outcome is a transistor with extremely high packing density for low onresistance, rugged avalanche characteristics and low gate charge. applications switching application ? automotive internal schematic diagram type v dss r ds(on) i d pw STD65N55F3 55v <10.5m ? 65a 110w dpak 1 3 www.st.com order code part number marking package packaging STD65N55F3 65n55f3 dpak tape & reel
contents STD65N55F3 2/13 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
STD65N55F3 electrical ratings 3/13 1 electrical ratings table 1. absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs =0) 55 v v gs gate-source voltage 20 v i d drain current (continuous) at t c = 25c 65 a i d drain current (continuous) at t c = 100c 46 a i dm (1) 1. pulse width limited by safe operating area drain current (pulsed) 260 a p tot total dissipation at t c = 25c 110 w derating factor 0.73 w/c dv/dt (2) 2. i sd 65a, di/dt 300a/s, v dd < v (br)dss. tj < tjmax peak diode recovery voltage slope 11 v/ns e as (3) 3. starting tj = 25c, id = 32a, vdd = 25v single pulse avalanche energy 390 mj t j t stg operating junction temperature storage temperature -55 to 175 c table 2. thermal resistance symbol parameter value unit rthj-case thermal resistance junction-case max 1.36 c/w rthj-pcb (1) 1. when mounted on fr-4 board of 1inch2, 2oz cu. thermal resistance ju nction-pcb max 50 c/w t l maximum lead temperature for soldering purpose 275 c
electrical characteristics STD65N55F3 4/13 2 electrical characteristics (t case =25c unless otherwise specified) table 3. static symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250a, v gs = 0 55 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating, v ds = max rating,tc = 125c 10 100 a a i gss gate body leakage current (v ds = 0) v gs = 20v 200 na v gs(th) gate threshold voltage v ds = v gs , i d = 250a 24v r ds(on) static drain-source on resistance v gs = 10v, i d = 32a 8.0 10.5 m ? table 4. dynamic symbol parameter test conditions min typ. max. unit g fs (1) 1. pulsed: pulse duration = 300s, duty cycle 1.5% forward transconductance v ds =25v, i d =32a 50 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds =25v, f=1mhz, v gs =0 2200 500 25 pf pf pf q g q gs q gd total gate charge gate-source charge gate-drain charge v dd =27v, i d = 65a v gs =10v (see figure 15) 33.5 12.5 9.5 45 nc nc nc
STD65N55F3 electrical characteristics 5/13 table 5. switching on/off (inductive load) symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v dd =27v, i d = 32a, r g =4.7 ?, v gs =10v (see figure 14) 20 50 ns ns t d(off) t f turn-off delay time fall time v dd =27v, i d = 32a, r g =4.7 ?, v gs =10v (see figure 14) 35 11.5 ns ns table 6. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm source-drain current source-drain current (pulsed) (1) 1. pulsed: pulse duration = 300s, duty cycle 1.5% 65 260 a a v sd forward on voltage i sd =65a, v gs =0 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd =65a, di/dt =100a/s, v dd =25v, tj=150c (see figure 16) 47 87 3.7 ns nc a
electrical characteristics STD65N55F3 6/13 2.1 electrical characteri stics (curves) figure 1. safe operating area figure 2. thermal impedance figure 3. output characteristics figure 4. transfer characteristics figure 5. normalized bv dss vs temperature figure 6. static drain-source on resistance
STD65N55F3 electrical characteristics 7/13 figure 7. gate charge vs gate-source voltage figure 8. capacitance variations figure 9. normalized gate threshold voltage vs temperature figure 10. normalized on resistance vs temperature figure 11. source-drain diode forward characteristics
test circuit STD65N55F3 8/13 3 test circuit figure 12. unclamped inductive load test circuit figure 13. unclamped inductive waveform figure 14. switching times test circuit for resistive load figure 15. gate charge test circuit figure 16. test circuit for inductive load switching and diode recovery times figure 17. switching time waveform
STD65N55F3 package mechanical data 9/13 4 package mechanical data in order to meet environmental requirements, st offers these devices in ecopack? packages. these packages have a lead-free second level interconnect. the category of second level interconnect is marked on the package and on the inner box label, in compliance with jedec standard jesd97. the maximum ratings related to soldering conditions are also marked on the inner box label. ecopack is an st trademark. ecopack specifications are available at: www.st.com
package mechanical data STD65N55F3 10/13 dim. mm. inch min. typ max. min. typ. max. a 2.2 2.4 0.086 0.094 a1 0.9 1.1 0.035 0.043 a2 0.03 0.23 0.001 0.009 b 0.64 0.9 0.025 0.035 b4 5.2 5.4 0.204 0.212 c 0.45 0.6 0.017 0.023 c2 0.48 0.6 0.019 0.023 d 6 6.2 0.236 0.244 d1 5.1 0.200 e 6.4 6.6 0.252 0.260 e1 4.7 0.185 e 2.28 0.090 e1 4.4 4.6 0.173 0.181 h 9.35 10.1 0.368 0.397 l 1 0.039 (l1) 2.8 0.110 l2 0.8 0.031 l4 0.6 1 0.023 0.039 r 0.2 0.008 v2 0 8 0 8 dpak mechanical data 0068772-f
STD65N55F3 packaging mechanical data 11/13 5 packaging mechanical data tape and reel shipment dpak footprint dim. mm inch min. max. min. max. a 330 12.992 b 1.5 0.059 c 12.8 13.2 0.504 0.520 d 20.2 0.795 g 16.4 18.4 0.645 0.724 n 50 1.968 t 22.4 0.881 base qty bulk qty 2500 2500 reel mechanical data dim. mm inch min. max. min. max. a0 6.8 7 0.267 0.275 b0 10.4 10.6 0.409 0.417 b1 12.1 0.476 d 1.5 1.6 0.059 0.063 d1 1.5 0.059 e 1.65 1.85 0.065 0.073 f 7.4 7.6 0.291 0.299 k0 2.55 2.75 0.100 0.108 p0 3.9 4.1 0.153 0.161 p1 7.9 8.1 0.311 0.319 p2 1.9 2.1 0.075 0.082 r 40 1.574 w 15.7 16.3 0.618 0.641 tape mechanical data all dimensions are in millimeters
revision history STD65N55F3 12/13 6 revision history table 7. revision history date revision changes 08-feb-2007 1 first release 22-feb-2007 2 description has been changed
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